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快乐十分专家推荐号码:Large bandgap of pressurized trilayer graphene
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The remarkable physical properties of graphene make it a marvel of materials science. However, the gapless character of graphene makes it impossible to be a strong contender for postsilicon electronics. Opening a sizable bandgap in graphene is hence highly desired. We developed a microwiring technique for high-pressure electrical measurement on nanomaterials with only a few layers. Through in situ electrical and absorption studies we demonstrate that an intrinsic bandgap of 2.5 eV is achievable in compressed Bernal-stacked trilayer graphene. The realization of a wide bandgap in compressed graphene stimulates explorations for the practical application of carbon-based electronic devices.
Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.
?1F.K., Y.C., and K.Y. contributed equally to this work.
- ?2To whom correspondence may be addressed. Email: or .
Author contributions: F.K., H.-k.M., and B.C. designed research; F.K., Y.C., K.Y., and J.Y. performed research; F.K., Y.C., K.Y., H.Z., Z.L., J.S.T., J.W., H.-k.M., and B.C. analyzed data; and F.K., Y.C., K.Y., J.Y., H.Z., Z.L., J.S.T., J.W., H.-k.M., and B.C. wrote the paper.
Reviewers: X.L., Boston University; and A.V.S., Lule? University of Technology.
The authors declare no conflict of interest.
This article contains supporting information online at www.pnas.org/lookup/suppl/doi:10.1073/pnas.1820890116/-/DCSupplemental.
Published under the PNAS license.